IMCQ120R078M2H - 1200V SiC MOSFET

Product Overview

Infineon

Datasheet Details

Part number	IMCQ120R078M2H
Manufacturer	Infineon
File Size	1.21 MB
Description	1200V SiC MOSFET
Datasheet	IMCQ120R078M2H Datasheet
Additional preview pages of the IMCQ120R078M2H datasheet.

Product details

Description

Pin definition: Pin 1 - Gate Pin 2 - Driver Source contact Pin 3…11 - Source Piin12-22,Tab - Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Type IMCQ120R078M2H Package PG-HDSOP-22-U03 Marking 12M2H078 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2024-12-12 IMCQ120R078M2H CoolSiC™ 1200 V SiC MOSFET G2 Table of conte

Features

VDSS = 1200 V at Tvj = 25°C.
IDDC = 22 A at TC = 100°C.
RDS(on) = 78.1 mΩ at VGS = 18 V, Tvj = 25°C.
Very low switching losses.
Overload operation up to Tvj = 200°C.
Short circuit withstand time 2 µs.
Benchmark gate threshold voltage, VGS(th) = 4.2 V.
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
Robust body diode for hard commutation.
. XT interconnection technology for best-i.

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Published: May 13, 2025 |