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IMSQ120R012M2HH - 1200V SiC MOSFET

Description

13-16 (5-8) case 1(2) and drain D1(D2) 3,4 (11,12) source S1(S2) 2(10) kelvin sense K1(K2) 1(9) gate G1(G2) Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction 2021-10-27 restr

Features

  • VDSS = 1200 V at Tvj = 25°C.
  • IDDC = 89 A at TC = 100°C.
  • RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C.
  • Internal layout optimized for fast switching.
  • Very low switching losses.
  • Overload operation up to Tvj = 200°C.
  • Short circuit withstand time 2 µs.
  • Benchmark gate threshold voltage, VGS(th) = 4.2 V.
  • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
  • Robust body diode for hard commutatio.

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Datasheet Details

Part number IMSQ120R012M2HH
Manufacturer Infineon
File Size 1.31 MB
Description 1200V SiC MOSFET
Datasheet download datasheet IMSQ120R012M2HH Datasheet
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    Full PDF Text Transcription

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    IMSQ120R012M2HH CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 89 A at TC = 100°C • RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C • Internal layout optimized for fast switching • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 µs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal performance • Suitable Infineon gate drivers can be found under https://www.infineon.
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