IMSQ120R012M2HH
Features
- VDSS = 1200 V at Tvj = 25°C
- IDDC = 89 A at TC = 100°C
- RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C
- Internal layout optimized for fast switching
- Very low switching losses
- Overload operation up to Tvj = 200°C
- Short circuit withstand time 2 µs
- Benchmark gate threshold voltage, VGS(th) = 4.2 V
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard mutation
- .XT interconnection technology for best-in-class thermal performance
- Suitable Infineon gate drivers can be found under https://.infineon./gdfinder
Potential applications
- General purpose drives (GPD)
- EV Charging
- Online UPS / Industrial UPS
- String inverter
- Servo drives
Product validation
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Description
- 13-16 (5-8)
- case 1(2) and drain D1(D2)
- 3,4 (11,12)
- source S1(S2)
- 2(10)
- kelvin sense K1(K2)
- 1(9)- gate G1(G2) Note: the source and sense pins are not...
