IMSQ120R012M2HH Description
the source and sense pins are not exchangeable, their exchange might lead to malfunction 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2025-02-13 IMSQ120R012M2HH CoolSiC™ 1200 V SiC MOSFET G2 Table of contents Table of contents Description.
IMSQ120R012M2HH Key Features
- VDSS = 1200 V at Tvj = 25°C
- IDDC = 89 A at TC = 100°C
- RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C
- Internal layout optimized for fast switching
- Very low switching losses
- Overload operation up to Tvj = 200°C
- Short circuit withstand time 2 µs
- Benchmark gate threshold voltage, VGS(th) = 4.2 V
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard mutation