IMSQ120R012M2HH Datasheet 1200v Sic MOSFET

Manufacturer: Infineon

Overview: IMSQ120R012M2HH CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .

Datasheet Details

Part number	IMSQ120R012M2HH
Manufacturer	Infineon
File Size	1.31 MB
Description	1200V SiC MOSFET
Datasheet	IMSQ120R012M2HH-Infineon.pdf

General Description

• 13-16 (5-8) – case 1(2) and drain D1(D2) • 3,4 (11,12) – source S1(S2) • 2(10) – kelvin sense K1(K2) • 1(9)– gate G1(G2) Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction 2021-10-27 restricted Copyright © Infineon Technologies AG 2021.

(9) G2 (10) K2 (1) G1 (2) K1 D2 (5,6,7,8) S2 (11,12) D1 (13,14,15,16) S1 (3,4) Type IMSQ120R012M2HH Package PG-HDSOP-16-U03 Marking 12M2H012 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2025-02-13 IMSQ120R012M2HH CoolSiC™ 1200 V SiC MOSFET G2 Table of contents Table of contents Description .

Key Features

VDSS = 1200 V at Tvj = 25°C.
IDDC = 89 A at TC = 100°C.
RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C.
Internal layout optimized for fast switching.
Very low switching losses.
Overload operation up to Tvj = 200°C.
Short circuit withstand time 2 µs.
Benchmark gate threshold voltage, VGS(th) = 4.2 V.
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
Robust body diode for hard commutatio.

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