IMSQ120R012M2HH - 1200V SiC MOSFET

Product Overview

Infineon

Datasheet Details

Part number	IMSQ120R012M2HH
Manufacturer	Infineon
File Size	1.31 MB
Description	1200V SiC MOSFET
Datasheet	IMSQ120R012M2HH Datasheet
Additional preview pages of the IMSQ120R012M2HH datasheet.

Product details

Description

13-16 (5-8) case 1(2) and drain D1(D2) 3,4 (11,12) source S1(S2) 2(10) kelvin sense K1(K2) 1(9) gate G1(G2) Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved.(9) G2 (10) K2 (1) G1 (2) K1 D2 (5,6,7,8) S2 (11,12) D1 (13,14,15,16) S1 (3,4) Type IMSQ120R012M2HH Package PG-HDSOP-16-U03

Features

VDSS = 1200 V at Tvj = 25°C.
IDDC = 89 A at TC = 100°C.
RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C.
Internal layout optimized for fast switching.
Very low switching losses.
Overload operation up to Tvj = 200°C.
Short circuit withstand time 2 µs.
Benchmark gate threshold voltage, VGS(th) = 4.2 V.
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
Robust body diode for hard commutatio.

📁 Similar Datasheet

IMS-2 - Inductors Commercial (Vishay Siliconix)
IMS-2SWWD-3 - Inductors (Vishay Siliconix)
IMS-2SWWD-30 - Inductors (Vishay Siliconix)
IMS-2WWD-40 - Inductors (Vishay Siliconix)
IMS-5 - Inductors (Vishay)
IMS1400 - High Performance 16K x 1 Static RAM (Inmos)
IMS1400M - High Performance 16K Static RAM (Inmos)
IMS1403 - High Performance 16K x 1 Static RAM (Inmos)

Other Datasheets by Infineon

Published: May 20, 2025 |