IMT65R048M1H
Features
- Optimizedswitchingbehaviorathighercurrents
- mutationrobustfastbodydiodewithlow Qf
- Superiorgateoxidereliability
- Tj,max=175°Candexcellentthermalbehavior
- Lower RDS(on)andpulsecurrentdependencyontemperature
- Increasedavalanchecapability
- patiblewithstandarddrivers(remendeddrivingvoltage:0V-18V)
- Kelvinsourceprovidesupto4timeslowerswitchinglosses
Benefits
- Uniquebinationofhighperformance,highreliabilityandeaseofuse
- Easeofuseandintegration
- Suitablefortopologieswithcontinuoushardmutation
- Higherrobustnessandsystemreliability
- Efficiencyimprovement
- Reducedsystemsizeleadingtohigherpowerdensity
PG-HSOF-8
1 2 34 5 6 7 8
Tab Tab
8 76 5 4 32 1
Drain Tab
Gate Pin 1
Driver Source Pin 2
- 1: Internal body diode
- 1
Source Pin 3-8
Potentialapplications
- SMPS
- UPS(uninterruptablepowersupplies)
- Solar PVinverters
- EVcharginginfrastructure
- Energystorageandbatteryformation
- Class...
