Datasheet Summary
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IMT65R260M1H Final datasheet
CoolSiC™ M1
CoolSiC™ MOSFET 650 V G1
The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap SiC material characteristics, the 650V CoolSiC™ MOSFET offers a unique bination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Features
- Optimized switching behavior at higher currents
- mutation robust fast body diode with low Qfr
- Superior gate oxide reliability
- Tj,max=175°C and excellent thermal behavior
- Lower RDS(on) and...