IMT65R260M1H
Overview
- Optimized switching behavior at higher currents
- Commutation robust fast body diode with low Qfr
- Superior gate oxide reliability
- Tj,max=175°C and excellent thermal behavior
- Lower RDS(on) and pulse current dependency on temperature
- Increased avalanche capability
- Compatible with standard drivers
- Kelvin source provides up to 4 times lower switching losses Benefits
- Unique combination of high performance, high reliability and ease of use
- Ease of use and integration
