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IMT65R260M1H Datasheet MOSFET

Manufacturer: Infineon

Overview: Public IMT65R260M1H Final datasheet CoolSiC™ M1 CoolSiC™ MOSFET 650 V G1 The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap SiC material characteristics, the 650V CoolSiC™ MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.

Key Features

  • Optimized switching behavior at higher currents.
  • Commutation robust fast body diode with low Qfr.
  • Superior gate oxide reliability.
  • Tj,max=175°C and excellent thermal behavior.
  • Lower RDS(on) and pulse current dependency on temperature.
  • Increased avalanche capability.
  • Compatible with standard drivers.
  • Kelvin source provides up to 4 times lower switching losses Benefits.
  • Unique combination of high performance, high re.

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