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IMTA65R050M2H Datasheet

Manufacturer: Infineon
IMTA65R050M2H datasheet preview

Datasheet Details

Part number IMTA65R050M2H
Datasheet IMTA65R050M2H-Infineon.pdf
File Size 929.69 KB
Manufacturer Infineon
Description SiC MOSFET
IMTA65R050M2H page 2 IMTA65R050M2H page 3

IMTA65R050M2H Overview

3 Thermal characteristics.

IMTA65R050M2H Key Features

  • Ultra‑low switching losses
  • Benchmark gate threshold voltage, VGS(th) = 4.5 V
  • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
  • Flexible driving voltage and patible with bipolar driving scheme
  • Robust body diode operation under hard mutation events
  • XT interconnection technology for best‑in‑class thermal performance
  • Enables high efficiency and high power density designs
  • Facilitates great ease of use and integration
  • Provides the best price performance ratio pared to Industry’s most
  • Reduces the size, weight and bill of materials of the systems
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