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IMW120R140M1H Datasheet Silicon Carbide MOSFET

Manufacturer: Infineon

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IMW120R140M1H silicon carbide mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	IMW120R140M1H
Manufacturer	Infineon
File Size	1.10 MB
Description	Silicon Carbide MOSFET
Download	IMW120R140M1H Download (PDF)

Overview

IMW120R140M1H IMW120R140M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide.

Key Features

Very low switching losses Gate pin 1.
Threshold-free on state characteristic.
Wide gate-source voltage range.
Benchmark gate threshold voltage, VGS(th) = 4.5V.
0V turn-off gate voltage for easy and simple gate drive.
Fully controllable dV/dt.
Robust body diode for hard commutation.
Temperature independent turn-off switching losses Benefits.
Efficiency improvement.
Enabling higher frequency.
Increased power density.
Cooling e.

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