IMW65R040M2H
Description
1 Final Data Sheet 2 Rev.2.2,2024-03-05 CoolSiCªMOSFET650VG2 IMW65R040M2H 1Maximumratings atTj=25°C,unlessotherwisespecified.
Key Features
- Ultra-lowswitchinglosses
- Benchmarkgatethresholdvoltage,VGS(th)=4.5V
- Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage
- Robustbodydiodeoperationunderhardmutationevents
- .XTinterconnectiontechnologyforbest-in-classthermalperformance Benefits
- Enableshighefficiencyandhighpowerdensitydesigns
- Facilitatesgreateaseofuseandintegration
- ProvidesthebestpriceperformanceratioparedtoIndustry’smost ambitiousroadmaps
- Reducesthesize,weightandbillofmaterialsofthesystems
- Enhancessystemrobustnessandreliability Potentialapplications
