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IMZ120R030M1H - Silicon Carbide MOSFET

Key Features

  • Very low switching losses.
  • Threshold-free on state characteristic.
  • Benchmark gate threshold voltage, VGS(th) = 4.5V.
  • 0V turn-off gate voltage for easy and simple gate drive.
  • Fully controllable dV/dt.
  • Robust body diode for hard commutation.
  • Temperature independent turn-off switching losses.
  • Sense pin for optimized switching performance Gate pin 4 Sense pin 3 Drain pin 1 Source pin 2 Benefits.
  • Efficiency improvement.
  • Enabling higher frequency.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IMZ120R030M1H IMZ120R030M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state characteristic  Benchmark gate threshold voltage, VGS(th) = 4.