• Part: IMZ120R090M1H
  • Description: 1200V SiC MOSFET
  • Category: MOSFET
  • Manufacturer: Infineon
  • Size: 1.24 MB
Download IMZ120R090M1H Datasheet PDF
Infineon
IMZ120R090M1H
Features - Very low switching losses - Threshold-free on state characteristic - Benchmark gate threshold voltage, VGS(th) = 4.5V - 0V turn-off gate voltage for easy and simple gate drive - Fully controllable d V/dt - Robust body diode for hard mutation - Temperature independent turn-off switching losses - Sense pin for optimized switching performance Gate pin 4 Sense pin 3 Drain pin 1 Source pin 2 Benefits - Efficiency improvement - Enabling higher frequency - Increased power density - Cooling effort reduction - Reduction of system plexity and cost Potential applications - Energy generation o Solar string inverter and solar optimizer - Industrial power supplies o Industrial UPS o Industrial SMPS - Infrastructure - Charge o Charger Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Table 1 Key Performance and Package...