• Part: IMZA120R078M2H
  • Description: 1200V SiC MOSFET
  • Category: MOSFET
  • Manufacturer: Infineon
  • Size: 1.45 MB
Download IMZA120R078M2H Datasheet PDF
Infineon
IMZA120R078M2H
Features - VDSS = 1200 V at Tvj = 25°C - IDDC = 20 A at TC = 100°C - RDS(on) = 78 mΩ at VGS = 18 V, Tvj = 25°C - Very low switching losses - Overload operation up to Tvj = 200°C - Short circuit withstand time 2 µs - Benchmark gate threshold voltage, VGS(th) = 4.2 V - Robust against parasitic turn on, 0 V turn-off gate voltage can be applied - Robust body diode for hard mutation - .XT interconnection technology for best-in-class thermal performance - Suitable Infineon gate drivers can be found under https://.infineon./gdfinder TO-247-4 - 4Pin 2021-10-27 restricted Potential applications - General purpose drives (GPD) - EV Charging - Online UPS / Industrial UPS - String inverter - Energy storage systems (ESS) - Welding Product validation - Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Description - drain 2 - source 3 - Kelvin sense contact 4 - gate Note: the source and sense pins are not exchangeable, their exchange might lead to...