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IMZA65R040M2H - 650V MOSFET

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General Description

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Overview

IMZA65R040M2H MOSFET CoolSiCªMOSFET650VG2 BuiltonInfineon’srobust2ndgenerationSiliconCarbidetrenchtechnology, the650VCoolSiC™MOSFETdeliversunparalleledperformance, superiorreliability,andgreateaseofuse.Itenablescosteffective,highly efficient,andsimplifieddesignstofulfilltheever-growingsystemand marketneeds.

Key Features

  • Ultra-low switching losses.
  • Benchmark gate threshold voltage, VGS(th) = 4.5 V.
  • Robust against parasitic turn-on even with 0 V turn-off gate voltage.
  • Flexible driving voltage and compatible with bipolar driving scheme.
  • Robust body diode operation under hard commutation events.
  • . XT interconnection technology for best-in-class thermal performance Benefits.
  • Enables high efficiency and high power density designs.
  • Facilitates gre.

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