IMZA75R008M1H Datasheet | Infineon

Public IMZA75R008M1H Final datasheet CoolSiC™ M1 CoolSiC™ Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap SiC material characteristics, the 750V CoolSiC™ MOSFET offers a unique bination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency. Features - Highly robust 750V technology, 100% avalanche tested - Best‑in‑class RDS(on) x Qfr - Excellent RDS(on) x Qoss and RDS(on) x QG - Unique bination of low Crss/Ciss and high VGS(th) - Infineon...