IMZC120R012M2H Description
1 drain 2 source 3 Kelvin sense contact 4 gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Copyright © Infineon Technologies AG 2021. Type IMZC120R012M2H Package PG-TO247-4-U07 Marking 12M2H012 Datasheet .infineon.
IMZC120R012M2H Key Features
- VDSS = 1200 V at Tvj = 25°C
- IDDC = 91 A at TC = 100°C
- RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Overload operation up to Tvj = 200°C
- Short circuit withstand time 2 µs
- Benchmark gate threshold voltage, VGS(th) = 4.2 V
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard mutation
- XT interconnection technology for best-in-class thermal performance