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IMZC120R012M2H

Manufacturer: Infineon
IMZC120R012M2H datasheet preview

Datasheet Details

Part number IMZC120R012M2H
Datasheet IMZC120R012M2H-Infineon.pdf
File Size 1.31 MB
Manufacturer Infineon
Description 1200V SiC MOSFET
IMZC120R012M2H page 2 IMZC120R012M2H page 3

IMZC120R012M2H Overview

1 drain 2 source 3 Kelvin sense contact 4 gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Copyright © Infineon Technologies AG 2021. Type IMZC120R012M2H Package PG-TO247-4-U07 Marking 12M2H012 Datasheet .infineon.

IMZC120R012M2H Key Features

  • VDSS = 1200 V at Tvj = 25°C
  • IDDC = 91 A at TC = 100°C
  • RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C
  • Very low switching losses
  • Overload operation up to Tvj = 200°C
  • Short circuit withstand time 2 µs
  • Benchmark gate threshold voltage, VGS(th) = 4.2 V
  • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
  • Robust body diode for hard mutation
  • XT interconnection technology for best-in-class thermal performance
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