IMZC120R017M2H
Features
- VDSS = 1200 V at Tvj = 25°C
- IDDC = 69 A at TC = 100°C
- RDS(on) = 17 mΩ at VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Overload operation up to Tvj = 200°C
- Short circuit withstand time 2 µs
- Benchmark gate threshold voltage, VGS(th) = 4.2 V
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard mutation
- .XT interconnection technology for best-in-class thermal performance
- Suitable Infineon gate drivers can be found under https://.infineon./gdfinder
PG-TO247-4-U07 (- 17)
2021-10-27 restricted
Potential applications
- General purpose drives (GPD)
- EV Charging
- Online UPS / Industrial UPS
- String inverter
- Energy Storage Systems (ESS)
- Welding
Product validation
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Description
- drain 2
- source 3
- Kelvin sense contact 4
- gate Note: the source and sense pins are not exchangeable, their exchange might lead to...
