• Part: IPA037N08N3
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 374.34 KB
Download IPA037N08N3 Datasheet PDF
Infineon
IPA037N08N3
IPA037N08N3 is Power-Transistor manufactured by Infineon.
- Part of the IPA037N08N3G comparator family.
Features - Ideal for high frequency switching and sync. rec. - Optimized technology for DC/DC converters - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance RDS(on) - N-channel, normal level - 100% avalanche tested - Pb-free plating; Ro HS pliant - Qualified according to JEDEC1) for target applications - Halogen-free according to IEC61249-2-21 Type IPA037N08N3 G Product Summary VDS RDS(on),max ID IPA037N08N3 G 80 V 3.7 m W 75 A Package Marking PG-TO220-FP 037N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current T C=25 °C2) T C=100 °C Pulsed drain current3) I D,pulse T C=25 °C Avalanche energy, single pulse4) E AS I D=75 A, R GS=25 W Gate source voltage V GS ±20 Power dissipation P tot T C=25...