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IPA040N08NM5S - 80V MOSFET

General Description

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Key Features

  • Ideal for high frequency switching and sync. rec.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • N-channel, normal level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Qualified according to JEDEC Standard Table 1 Key Performance Parameters Parameter Value Unit VDS 80 V RDS(on),max 4.0 mΩ ID 75 A Qoss 83 nC QG(.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IPA040N08NM5S MOSFET OptiMOSTM5Power-Transistor,80V Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 4.0 mΩ ID 75 A Qoss 83 nC QG(0V..10V) 70 nC PG-TO220FP Gate Pin 1 Drain Pin 2 Source Pin 3 Type/OrderingCode IPA040N08NM5S Package PG-TO 220 FullPAK Marking 040N085S RelatedLinks - Final Data Sheet 1 Rev.2.