Infineon Technologies IPA60R125CP
Power-Transistor
| Part No. | IPA60R125CP |
|---|---|
| Datasheet | IPA60R125CP Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
FEATURES
● Worldwide best R DS,on in TO220 Fullpak● Ultra low gate charge
● Extreme dv/dt rated
● High peak current capability
● Qualified according to JEDEC1) for target applications
● Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.125 Ω 53 nC PG-TO220-3-31 CoolMOS CP is specially designed for:
● Hard switching SMPS topologies Type IPA60R125CP Package PG-TO220-3-31 Ordering Code SP000095275 Marking 6R125P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current 2) Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current3) Avalanche energy, single pulse Avalanche energy, repetitive t AR3),4) Avalanche current, repetitive t AR3),4) MOSFET dv /dt ruggedness Gate source voltage Value 25 16 82 708 1.1 11 Unit A I D,pulse E AS E AR I AR dv /dt V GS T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V mJ A V/ns V V DS=0...480 V static AC (f >1 Hz) 50 ±20 ±30 35 -55 ... 150 Power dissipation Operating and storage temperature Mounting torque Rev.
