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IPA65R045C7 - MOSFET

General Description

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Key Features

  • Increased MOSFET dv/dt ruggedness.
  • Better efficiency due to best in class FOM RDS(on).
  • Eoss and RDS(on).
  • Qg.
  • Best in class RDS(on) /package.
  • Easy to use/drive.
  • Pb-free plating, halogen free mold compound Benefits.
  • Enabling higher system efficiency.
  • Enabling higher frequency / increased power density solutions.
  • System cost / size savings due to reduced cooling requirements.
  • Higher system reliability due to low.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IPA65R045C7 MOSFET 650VCoolMOSªC7PowerDevice CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. CoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.Theproductportfolio providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering betterefficiency,reducedgatecharge,easyimplementationand outstandingreliability.