IPA65R045C7
Description
Sheet 2 Rev.2.1,2020-01-29 650VCoolMOSªC7PowerDevice IPA65R045C7 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, single pulse MOSFET dv/dt ruggedness Gate source voltage (static) Gate source voltage (dynamic) Power dissi.
Key Features
- IncreasedMOSFETdv/dtruggedness
- BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
- BestinclassRDS(on)/package
- Easytouse/drive
- Pb-freeplating,halogenfreemoldpound Benefits
- Enablinghighersystemefficiency
- Enablinghigherfrequency/increasedpowerdensitysolutions
- Systemcost/sizesavingsduetoreducedcoolingrequirements
