IPA70R900P7S
Features
- Extremelylowlossesduetoverylow FOMRDS(on)- Qgand RDS(on)- Eoss
- Excellentthermalbehavior
- Integrated ESDprotectiondiode
- Lowswitchinglosses(Eoss)
- Productvalidationacc.JEDECStandard
Benefits
- Costpetitivetechnology
- Lowertemperature
- High ESDruggedness
- Enablesefficiencygainsathigherswitchingfrequencies
- Enableshighpowerdensitydesignsandsmallformfactors
Potentialapplications
Remendedfor Flybacktopologiesforexampleusedin Chargers, Adapters,Lighting Applications,etc.
Productvalidation
Qualifiedaccordingto JEDECStandard
Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyremended.
Table1Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj=25°C
RDS(on),max
Ω
Qg,typ
6.8 n C
ID,pulse
Eoss @ 400V
µJ
V(GS)th,typ
ESD class (HBM) 1C
Type/Ordering Code IPA70R900P7S
Package PG-TO 220 Full PAK
Marking...
