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IPA80R310CE Datasheet PDF

Infineon Technologies IPA80R310CE

The high voltage capability combines safety with performance and ruggedness to allow stable designs at highest efficiency level.
Part No. IPA80R310CE
Datasheet IPA80R310CE Download
Manufacturer
Infineon Technologies
Description MOSFET
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IPA80R310CE datasheet page 1 preview

DESCRIPTION

CoolMOS™ CE is a revolutionary technology for high voltage power MOSFETs. CoolMOS™ 800V CE comes with selected package choice offering the benefit of reduced system costs and higher power density designs.

FEATURES

● High voltage technology
● Extreme dv/dt rated
● High peak current capability
● Low gate charge
● Low effective capacitances
● Pb-free plating, RoHS Compliant, Halogen free mold compound
● Qualified for consumer grade applications

APPLICATIONS

LED Lighting and Adapter in QR Flyback topology Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. TO-220 FP Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj=25°C RDS(on),max 800 310 V mΩ Qg.typ 91 nC ID,pulse 51 A Eoss@400V 6.7 µJ Body diode di/dt 400 A/µs Type / Ordering Code IPA80R310CE Package PG-TO 220 FullPAK Marking 8R310CE Related Links see Appendix A Final Data Sheet 2 Rev. 2.1, 2015-06-2...
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