Infineon Technologies IPA80R650CE
The high voltage capability combines safety with performance and ruggedness to allow stable designs at highest efficiency level.| Part No. | IPA80R650CE |
|---|---|
| Datasheet | IPA80R650CE Download |
| Manufacturer |  Infineon Technologies |
| Description | MOSFET |
| Buy | Stock & Price |
DESCRIPTION
CoolMOS™ CE is a revolutionary technology for high voltage power MOSFETs. CoolMOS™ 800V CE comes with selected package choice offering the benefit of reduced system costs and higher power density designs.FEATURES
● High voltage technology● Extreme dv/dt rated
● High peak current capability
● Low gate charge
● Low effective capacitances
● Pb-free plating, RoHS Compliant, Halogen free mold compound
● Qualified for consumer grade applications
APPLICATIONS
LED Lighting and Adapter in QR Flyback topology Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. TO-220 FP Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj=25°C RDS(on),max 800 650 V mΩ Qg.typ 45 nC ID,pulse 24 A Eoss@400V 3.3 µJ Body diode di/dt 400 A/µs Type / Ordering Code IPA80R650CE Package PG-TO 220 FullPAK Marking 8R650CE Related Links see Appendix A Final Data Sheet 2 Rev. 2.1, 2015-06-2...
