IPAN70R600P7S - 700V MOSFET

Description

Features

Extremely low losses due to very low FOM RDS(on).
Qg and RDS(on).
Eoss.
Excellent thermal behavior.
Integrated ESD protection diode.
Low switching losses (Eoss).
Product validation acc. JEDEC Standard Benefits.
Cost competitive technology.
Lower temperature.
High ESD ruggedness.
Enables efficiency gains at higher switching frequencies.
Enables high power density designs and small form factors Potenti.

Infineon

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Datasheet Details

Part number	IPAN70R600P7S
Manufacturer	Infineon
File Size	1.06 MB
Description	700V MOSFET
Datasheet	IPAN70R600P7S Datasheet
Additional preview pages of the IPAN70R600P7S datasheet.

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Full PDF Text Transcription

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IPAN70R600P7S MOSFET 700VCoolMOSªP7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,TV,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns.

Published: Aug 27, 2025 |