IPAW60R360P7S - Power-Transistor

Description

Features

Suitable for hard and soft switching (PFC and LLC) due to an outstanding  commutation ruggedness.
Significant reduction of switching and conduction losses.
Excellent ESD robustness >2kV (HBM) for all products.
Better RDS(on)/package products compared to competition enabled by a  low RDS(on).
A (below 1Ohm.
mm²).
Product validation acc. JEDEC Standard Benefits.
Ease of use and fast design-in through low ringing tendency and usage  ac.

Infineon

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Datasheet Details

Part number	IPAW60R360P7S
Manufacturer	Infineon
File Size	1.07 MB
Description	Power-Transistor
Datasheet	IPAW60R360P7S Datasheet
Additional preview pages of the IPAW60R360P7S datasheet.

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Full PDF Text Transcription

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IPAW60R360P7S MOSFET 600VCoolMOSªP7PowerTransistor TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody diodeagainsthardcommutationandexcellentESDcapability. Furthermore,extremelylowswitchingandconductionlossesmake switchingapplicationsevenmoreefficient,morecompactandmuch cooler.

Published: Sep 6, 2018 |