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IPB009N03L - MOSFET

Download the IPB009N03L datasheet PDF. This datasheet also covers the IPB009N03LG variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • MOSFET for ORing and Uninterruptible Power Supply.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPB009N03LG_InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPB009N03LG MOSFET OptiMOSª3Power-Transistor,30V Features •MOSFETforORingandUninterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •Ultra-lowon-resistanceRDS(on) •100%Avalanchetested •Pb-freeplating;RoHScompliant Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 0.95 mΩ ID 180 A D²-PAK7pin tab 1 7 Drain Pin 4, tab Gate Pin 1 Source Pin 2,3,5,6,7 Type/OrderingCode IPB009N03L G Package PG-TO263-7 Marking 009N03L RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2016-04-21 OptiMOSª3Power-Transistor,30V IPB009N03LG TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .