Infineon Technologies IPB010N06N
MOSFET
| Part No. | IPB010N06N |
|---|---|
| Datasheet | IPB010N06N Download |
| Manufacturer |  Infineon Technologies |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
● Optimized for synchronous rectification● 100% avalanche tested
● Superior thermal resistance
● N-channel, normal level
● Qualified according to JEDEC1) for target applications
● Pb-free lead plating; RoHS compliant
● Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters Parameter Value Unit VDS 60 V RDS(on),max 1.0 mΩ ID 180 A Qoss 228 nC QG(0V..10V) 208 nC D²-PAK 7pin 1 7 tab Drain Pin 4, tab Gate Pin 1 Source Pin 2,3,5,6,7 Type / Ordering Code IPB010N06N Package PG-TO263-7 Marking 010N06N Related Links - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.4, 2016-01-18 OptiMOSTM Power-Transistor, 60 V IPB010N06N Table of Contents
DESCRIPTION
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