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IPB010N06N - MOSFET

General Description

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Key Features

  • Optimized for synchronous rectification.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel, normal level.
  • Qualified according to JEDEC1) for target.

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IPB010N06N MOSFET OptiMOSTMPower-Transistor,60V Features •Optimizedforsynchronousrectification •100%avalanchetested •Superiorthermalresistance •N-channel,normallevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 1.0 mΩ ID 180 A Qoss 228 nC QG(0V..10V) 208 nC D²-PAK7pin 1 7 tab Drain Pin 4, tab Gate Pin 1 Source Pin 2,3,5,6,7 Type/OrderingCode IPB010N06N Package PG-TO263-7 Marking 010N06N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.4,2016-01-18 OptiMOSTMPower-Transistor,60V IPB010N06N TableofContents Description . . . . . . . . . . . . . . . .