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IPB015N06NF2S Final datasheet
MOSFET
StrongIRFET™2 Power‑Transistor, 60 V
Features
• Optimized for wide range of applications • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21
Product validation
Qualified according to JEDEC Standard
Table 1 Parameter VDS RDS(on),max ID Qoss QG (0V..10V)
Key Performance Parameters
Value
Unit
60
V
1.5
mΩ
197
A
153
nC
155
nC
D²PAK
tab
2 1
3
32 1
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/Ordering Code IPB015N06NF2S
Package PG‑TO263‑3
Marking 015N06NS
Related Links ‑
Datasheet
https://www.infineon.com
1
Revision 2.1 2024‑10‑07
Public
StrongIRFET™2 Power‑Transistor, 60 V
IPB015N06NF2S
Table of Contents
Description . . . . . . . . . . . . . .
IPB015N06NF2S Datasheet
