IPB015N06NF2S
Description
1 Datasheet https://.infineon. 2 Revision 2.1 2024‑10‑07 Public StrongIRFET™2 Power‑Transistor, 60 V IPB015N06NF2S 1 at TA=25 °C, unless otherwise specified Table 2 Parameter Symbol Continuous drain current 1) ID Pulsed drain current 3) Avalanche energy, single pulse 4) Gate source voltage ID,pulse EAS VGS Power dissipation Ptot Operating and storage temperature Tj, Tstg Values Unit Note/ Test Condition Min.
Key Features
- Optimized for wide range of applications
- N‑channel, normal level
- 100% avalanche tested
- Pb‑free lead plating; RoHS compliant
