IPB015N08N5 - MOSFET

Infineon

Key Features

Ideal for high frequency switching and sync. rec.
Optimized technology for DC/DC converters.
Excellent gate charge x RDS(on) product (FOM).
Very low on-resistance RDS(on).
N-channel, normal level.
100% avalanche tested.
Pb-free plating; RoHS compliant.
Qualified according to JEDEC1) for target.

IPB015N08N5 mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	IPB015N08N5
Manufacturer	Infineon
File Size	1.19 MB
Description	MOSFET
Datasheet	IPB015N08N5 Datasheet

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Full PDF Text Transcription (Reference)

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOS™5Power-Transistor,80V IPB015N08N5 DataSheet Rev.2.1 Final PowerManagement&Multimarket 1Description Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 1.5 mΩ ID 180 A Qoss 207 nC QG(0V..