IPB017N10N5LF
Description
Sheet 2 Rev.2.3,2022-09-09 OptiMOSTM5LinearFET,100V IPB017N10N5LF 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage Power dissipation Operating and storage temperature ID ID,pulse EAS VGS Ptot Tj,Tstg Min. 256 - 198 - 31 - 1024 - 979 - 20 - 313 - 150 Unit Note/TestCondition VGS=10V,TC=25°C A VGS=10V,TC=100°C VGS=10V,TC=25°C,RthJA=40K/W2) A TC=25°C mJ ID=100A,RGS=25Ω VW TC=25°C °C - 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol - case Device on PCB, minimal footprint Device on PCB, 6 cm² cooling area2) RthJC RthJA RthJA Min.
Key Features
- Idealforhot-swapande-fuseapplications
- Verylowon-resistanceRDS(on)
- WidesafeoperatingareaSOA
- N-channel,normallevel
- 100%avalanchetested
- Pb-freeplating;RoHScompliant
- QualifiedaccordingtoJEDEC1)fortargetapplications
