IPB024N08NF2S
Description
Sheet 2 Rev.2.0,2022-09-23 StrongIRFETTM2Power-Transistor IPB024N08NF2S 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) ID Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage Power dissipation Operating and storage temperature ID,pulse EAS VGS Ptot Tj,Tstg Min. 107 - 82 - 82 - 22 - 428 - 119 - 20 - 150 - 3.8 - 175 Unit Note/TestCondition VGS=10V,TC=25°C A VGS=10V,TC=100°C VGS=6V,TC=100°C VGS=10V,TA=25°C,RthJA=40°C/W2) A TA=25°C mJ ID=95A,RGS=25Ω V- W TC=25°C TA=25°C,RthJA=40°C/W2) °C - 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol - case RthJC - ambient, 6 cm² cooling area2) RthJA - ambient, minimal footprint RthJA Min.
Key Features
- Optimizedforawiderangeofapplications
- N-Channel,normallevel
- 100%avalanchetested
- Pb-freeleadplating;RoHScompliant
