IPB024N10N5 - MOSFET

Datasheet Summary

Description

Features

Ideal for high frequency switching and sync. rec.
Excellent gate charge x RDS(on) product (FOM).
Very low on-resistance RDS(on).
N-channel, normal level.
100% avalanche tested.
Pb-free plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IPB024N10N5
Manufacturer	Infineon
File Size	0.96 MB
Description	MOSFET
Datasheet	IPB024N10N5 Datasheet
Additional preview pages of the IPB024N10N5 datasheet.

📁 Similar Datasheet

IPB020N10N5 - N-Channel MOSFET (INCHANGE)
IPB020N10N5LF - N-Channel MOSFET (INCHANGE)
IPB021N06N3G - Power-Transistor (Infineon Technologies)
IPB021N06N3G - N-Channel MOSFET (INCHANGE)
IPB023N04N - N-Channel MOSFET (INCHANGE)
IPB023N04NG - Power-Transistor (Infineon Technologies)
IPB026N06N - N-Channel MOSFET (INCHANGE)
IPB026N06N - Power-Transistor (Infineon Technologies)
IPB027N10N3 - N-Channel MOSFET (INCHANGE)
IPB027N10N5 - N-Channel MOSFET (INCHANGE)

Other Datasheets by Infineon

IPB024N08N5 - MOSFET
IPB024N08NF2S - MOSFET
IPB020N08N5 - MOSFET
IPB020N10N5 - MOSFET
IPB020N10N5LF - MOSFET
IPB021N06N3 - Power Transistor
IPB021N10NM5LF2 - 100V Linear FET
IPB022N12NM6 - MOSFET

Full PDF Text Transcription

Click to expand full text

IPB024N10N5 MOSFET OptiMOSª5Power-Transistor,100V Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 2.4 mΩ ID 221 A Qoss 142 nC QG(0V..10V) 111 nC D²-PAK7pin tab 1 7 Drain Pin 4, tab Gate Pin 1 Source Pin 2,3,5,6,7 Type/OrderingCode IPB024N10N5 Package PG-TO263-7 Marking 024N10N5 RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.

Published: Jul 21, 2023 |