IPB027N10N5
IPB027N10N5 is MOSFET manufactured by Infineon.
Features
- Idealforhighfrequencyswitchingandsync.rec.
- Excellentgatechargex RDS(on)product(FOM)
- Verylowon-resistance RDS(on)
- N-channel,normallevel
- 100%avalanchetested
- Pb-freeplating;Ro HSpliant
- Qualifiedaccordingto JEDEC1)fortargetapplications
- Halogen-freeaccordingto IEC61249-2-21
Table1Key Performance Parameters
Parameter
Value
Unit
VDS 100 V
RDS(on),max
2.7 mΩ
ID 166 A
Qoss 142 n C
QG(0V..10V)
112 n C
D²PAK
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/Ordering Code IPB027N10N5
Package PG-TO 263-3
Marking 027N10N5
Related Links
- 1) J-STD20 and JESD22 Final Data Sheet
Rev.2.4,2017-07-11
Opti MOSª5Power-Transistor,100V
Tableof Contents
Description
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