IPB027N10N5 - MOSFET

Datasheet Summary

Description

Features

Ideal for high frequency switching and sync. rec.
Excellent gate charge x RDS(on) product (FOM).
Very low on-resistance RDS(on).
N-channel, normal level.
100% avalanche tested.
Pb-free plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPB027N10N5
Manufacturer	Infineon
File Size	0.98 MB
Description	MOSFET
Datasheet	IPB027N10N5 Datasheet
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IPB027N10N5 MOSFET OptiMOSª5Power-Transistor,100V Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 2.7 mΩ ID 166 A Qoss 142 nC QG(0V..10V) 112 nC D²PAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPB027N10N5 Package PG-TO 263-3 Marking 027N10N5 RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.

Published: Feb 17, 2016 |