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IPB035N08N3 - Power Transistor

Download the IPB035N08N3 datasheet PDF. This datasheet also covers the IPB035N08N3G variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Ideal for high frequency switching and sync. rec.
  • Optimized technology for DC/DC converters.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • N-channel, normal level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPB035N08N3G-InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IPB035N08N3G Power-Transistor Infineon Technologies
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IPB031NE7N3G Power-Transistor Infineon Technologies AG

Other Datasheets by Infineon

Part Number Description
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IPB031N08N5 MOSFET
IPB031NE7N3 Power Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G Product Summary V DS R DS(on),max ID 80 V 3.