IPB035N10NF2S
Features
- Optimized for a wide range of applications
- N‑channel, normal level
- 100% avalanche tested
- Pb‑free lead plating; Ro HS pliant
- Halogen‑free according to IEC61249‑2‑21
Product validation
Qualified according to JEDEC Standard
Table 1 Parameter VDS RDS(on),max ID Qoss QG
Key performance parameters
Value
Unit
3.5 mΩ
89 n C
69 n C
D²PAK tab
2 1
32 1
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Part number IPB035N10NF2S
Package PG‑TO263‑3
Marking 035N10NS
Related links ‑
Datasheet https://.infineon.
Revision 1.0 2025‑01‑20
Public
Strong IRFET™ 2 Power‑Transistor, 100 V
Table of contents
Description
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