Description
Sheet 2 Rev.2.0,2023-12-22 OptiMOSTM6Power-Transistor,120V IPB035N12NM6 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) ID Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ID,pulse IAS EAS VGS Ptot Tj,Tstg Min. 138 - 106 - 106 - 23 - 552 - 86 - 492 - 20 - 246 - 3.8 - 175 Unit Note/TestCondition VGS=10V,TC=25°C A VGS=10V,TC=100°C VGS=8V,TC=100°C VGS=10V,TA=25°C,RthJA=40°C/W2) A TC=25°C A TC=25°C mJ ID=53A,RGS=25Ω V- W TC=25°C TA=25°C,RthJA=40°C/W2) °C - 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol - case RthJC - ambient, 6 cm² cooling area2) RthJA Min.
Key Features
- N-channel,normallevel
- Verylowon-resistanceRDS(on)
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowreverserecoverycharge(Qrr)
- Highavalancheenergyrating
- 175°Coperatingtemperature
- Optimizedforhighfrequencyswitchingandsynchronousrectification
- Pb-freeleadplating;RoHScompliant
- Halogen-freeaccordingtoIEC61249-2-21
