IPB038N12N3 Description
IPP041N12N3 G OptiMOSTM3 Power-Transistor.
IPB038N12N3 Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant, halogen free
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- case R thJC
- Thermal resistance
- junction