Infineon Technologies IPB04N03LA
OptiMOS 2 Power-Transistor
| Part No. | IPB04N03LA |
|---|---|
| Datasheet | IPB04N03LA Download |
| Manufacturer |  Infineon Technologies |
| Description | OptiMOS 2 Power-Transistor |
| Buy | Stock & Price |
FEATURES
● Ideal for high-frequency dc/dc converters● Qualified according to JEDEC for target applications
● N-channel - Logic level
● Excellent gate charge x R DS(on) product (FOM)
● Very low on-resistance R DS(on)
● Superior thermal resistance
● 175 °C operating temperature
● dv /dt rated P-TO263-3-2 1) Product Summary V DS R DS(on),max (SMD version) ID 25 3.9 80 V mΩ A P-TO262-3-1 P-TO220-3-1 Type IPB04N03LA IPI04N03LA IPP04N03LA Package P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Ordering Code Q67042-S4181 Q67042-S4183 Q67042-S4182 Marking 04N03LA 04N03LA 04N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 80 80 385 290 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C3) I D=77 A, R GS=25 Ω I D=80 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 107 -55 ...
