IPB057N15NM6 - 150V MOSFET

Infineon

General Description

1 Maximum ratings 3 T

Key Features

N‑channel.
Very low on‑resistance RDS(on).
Superior thermal resistance.
100% avalanche tested.
Pb‑free lead plating; RoHS compliant.
Halogen‑free according to IEC61249‑2‑21.
MSL 1 classified according to J‑STD‑020 Product validation Fully qualified according to JEDEC for Industrial.

📥 Download Datasheet

IPB057N15NM6 150v mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	IPB057N15NM6
Manufacturer	Infineon
File Size	721.65 KB
Description	150V MOSFET
Datasheet	IPB057N15NM6 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IPB057N06N	Power-Transistor	Infineon Technologies
IPB057N06N	N-Channel MOSFET	INCHANGE
IPB050N06NG	Power-Transistor	Infineon Technologies
IPB052N04NG	Power-Transistor	Infineon Technologies
IPB054N06N3	N-Channel MOSFET	INCHANGE

Other Datasheets by Infineon

Part Number	Description
IPB050N06N	Power-Transistor
IPB051NE8N	Power-Transistor
IPB051NE8NG	Power-Transistor
IPB052N04N	Power-Transistor
IPB054N06N3	Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Public IPB057N15NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 150 V Features • N‑channel • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key performance parameters Parameter Value Unit VDS 150 V RDS(on),max 5.7 mΩ ID 128 A Qoss 132 nC QG 44 nC Qrr (500A/μs) 131 nC Type / Ordering code IPB057N15NM6 Package PG‑TO263‑3 D²PAK tab 2 1 3 32 1 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Marking 057N15N6 Related links ‑ Datasheet https://www.infineon.com 1 Revision 1.