Datasheet4U Logo Datasheet4U.com

IPB068N20NM6 Datasheet 200V MOSFET

Manufacturer: Infineon

📥 Download Datasheet

General Description

.

.

.

Overview

IPB068N20NM6 MOSFET OptiMOSTM6Power-Transistor,200V.

Key Features

  • N-channel, normal level.
  • Very low on-resistance RDS(on).
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low reverse recovery charge (Qrr).
  • High avalanche energy rating.
  • 175°C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21.
  • MSL 1 classified according to J-STD-020.
  • 100% avalanche tested Product validation Fully qualified according to JEDEC for Indus.

More Datasheets from Infineon

Part Number Description
IPB065N03L Power-Transistor
IPB065N10N3 MOSFET
IPB065N10N3G MOSFET
IPB065N15N3G Power Transistor
IPB067N08N3 Power-Transistor
IPB067N08N3G Power-Transistor
IPB009N03L MOSFET
IPB010N06N MOSFET
IPB011N04L Power Transistor
IPB011N04NF2S MOSFET