Infineon Technologies IPB08CN10NG
Power-Transistor
| Part No. | IPB08CN10NG |
|---|---|
| Datasheet | IPB08CN10NG Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
FEATURES
● N-channel, normal level● Excellent gate charge x R DS(on) product (FOM)
● Very low on-resistance R DS(on)
● 175 °C operating temperature
● Pb-free lead plating; RoHS compliant
● Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO263) ID 100 8.2 95 V mΩ A
● Ideal for high-frequency switching and synchronous rectification Type IPB08CN10N G IPI08CN10N G IPP08CN10N G Package Marking PG-TO263-3 08CN10N PG-TO262-3 08CN10N PG-TO220-3 08CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C I D=95 A, R GS=25 Ω I D=95 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C Value 95 68 380 262 6 ±20 167 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A Rev.
