Infineon Technologies IPB093N04LG
Power-Transistor
| Part No. | IPB093N04LG |
|---|---|
| Datasheet | IPB093N04LG Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
FEATURES
● Fast switching MOSFET for SMPS● Optimized technology for DC/DC converters
● Qualified according to JEDEC for target applications
● N-channel, logic level
● Excellent gate charge x R DS(on) product (FOM)
● Very low on-resistance R DS(on)
● 100% Avalanche tested
● Pb-free plating; RoHS compliant IPB093N04L G Type
● Pb-free plating; RoHS compliant 1) Product Summary V DS R DS(on),max ID 40 9.3 50 V mΩ A Package Marking PG-TO263-3 093N04L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C Pulsed drain current2) Avalanche current, single pulse 3) Avalanche energy, single pulse Gate source voltage 1) Value 50 38 46 33 350 50 10 ±20 Unit A I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=50 A, R GS=25 Ω mJ V J-STD20 and JESD22 Rev. 1.0 page 1 2007-12-10 IPB093N04L G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C=25 °C Value 47 -55 ...
