IPB097N08N3G
IPB097N08N3G is Power-Transistor manufactured by Infineon.
Features
Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q' 3 81>>5< >? B=1<<5F5< Q 1F1<1>3 85 D5CD54 Q) 2 6B55 @<1D9>7 + ? " , 3 ? =@<91>D Q- E1<96954 13 3 ? B49>7 D? $ )# 6? BD1B75D1@@<93 1D9? >C Q" 1<? 75>6B55 13 3 ? B49>7 D? #
IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G
Product Summary V 9H R , ? >=1H, & I9
0( J 1&/ Y" /( 6
Type
#) ) ' ' ! #) # ' ' !
#) ' ' !
Package Marking
E=%ID-
- (%+ )((C(0C
E=%ID- .- %+ )((C(0C
E=%ID- .+%+ (1/C(0C
Maximum ratings, 1DT V T E><5CC? D85BG9C5 C@53 96954
Parameter
Symbol Conditions
? >D9>E? EC4B19> 3 EBB5>D
I 9 T 8 T
- #
T 8 T
) E<C54 4B19> 3 EBB5>D- #
I 9$a X_Q T 8 T
F1<1>3 85 5>5B7I C9>7<5 @E<C5+# E 6H I 9 R =H "
!1D5 C? EB3 5 F? <D175
V =H
) ? G5B49CC9@1D9? >
P `[` T 8 T
( @5B1D9>7 1>4 CD? B175 D5=@5B1DEB5 T V T _`S
# 3 <9=1D93 3 1D57? BI #' #
)#$ , - 1>4 $ ,
- # , 55 697EB5 6? B=? B5 45D19<54 9>6? B=1D9? > +# , 55 697EB5 6? B=? B5 45D19<54 9>6? B=1D9? >
Value
/( -)
- 0( 1( q- ( )((
+ 5F...
