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IPB108N15N3 Datasheet Power-transistor

Manufacturer: Infineon

Overview: IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 150 V 10.8 mW 83 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant; Halogen free.
  • Qualified according to JEDEC1) for target.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Infineon Technologies Logo IPB108N15N3G Power Transistor Infineon Technologies
INCHANGE Logo IPB108N15N3G N-Channel MOSFET INCHANGE

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