IPB108N15N3
IPB108N15N3 is Power-Transistor manufactured by Infineon.
- Part of the IPB108N15N3G comparator family.
- Part of the IPB108N15N3G comparator family.
IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G
OptiMOSTM3 Power-Transistor
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO263) ID
150 V 10.8 mW 83 A
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant; Halogen free
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
Type
IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G
Package Marking
PG-TO263 108N15N
PG-TO220-3 111N15N
PG-TO262-3 111N15N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter...
