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IPB133N12NM6 - MOSFET

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General Description

1 Maximum ratings 3 T

Overview

Public IPB133N12NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 120.

Key Features

  • N‑channel, normal level.
  • Very low on‑resistance RDS(on).
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low reverse recovery charge (Qrr).
  • High avalanche energy rating.
  • 175°C operating temperature.
  • Optimized for high frequency switching.
  • Pb‑free lead plating; RoHS compliant.
  • Halogen‑free according to IEC61249‑2‑21.
  • MSL 1 classified according to J‑STD‑020 Product validation Fully qualified according to.

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