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IPB160N04S4-H1 - Power-Transistor

Key Features

  • N-channel - Enhancement mode.
  • AEC qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green product (RoHS compliant).
  • Ultra low Rds(on).
  • 100% Avalanche tested Product Summary V DS R DS(on) ID 40 V 1.6 mW 160 A PG-TO263-7-3 Type IPB160N04S4-H1 Package PG-TO263-7-3 Marking 4N04H1 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V.

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Full PDF Text Transcription for IPB160N04S4-H1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IPB160N04S4-H1. For precise diagrams, and layout, please refer to the original PDF.

IPB160N04S4-H1 OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green p...

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• MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on) ID 40 V 1.

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