IPB160N04S4-H1
IPB160N04S4-H1 is manufactured by Infineon.
OptiMOS®-T2 Power-Transistor
Features
- N-channel
- Enhancement mode
- AEC qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green product (RoHS pliant)
- Ultra low Rds(on)
- 100% Avalanche tested
Product Summary V DS R DS(on) ID
40 V 1.6 mW 160 A
PG-TO263-7-3
Type IPB160N04S4-H1
Package PG-TO263-7-3
Marking 4N04H1
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A
Avalanche current, single pulse
I AS
- Gate source...
