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IPB160N08S4-03 - Power-Transistor

Features

  • N-channel - Enhancement mode.
  • AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested IPB160N08S4-03 Product Summary V DS R DS(on),max ID 80 V 3.2 mW 160 A PG-TO263-7-3 Type IPB160N08S4-03 Package PG-TO263-7-3 Marking 4N0803 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS.

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Datasheet Details

Part number IPB160N08S4-03
Manufacturer Infineon
File Size 199.18 KB
Description Power-Transistor
Datasheet download datasheet IPB160N08S4-03 Datasheet
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OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB160N08S4-03 Product Summary V DS R DS(on),max ID 80 V 3.2 mW 160 A PG-TO263-7-3 Type IPB160N08S4-03 Package PG-TO263-7-3 Marking 4N0803 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25°C E AS I D=80A I AS - V GS - P tot T C=25°C T j, T stg - Value 160 120 640 350 120 ±20 208 -55 .
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