IPB180N03S4L-01
IPB180N03S4L-01 is manufactured by Infineon.
OptiMOS™-T2 Power-Transistor
Features
- N-channel
- Enhancement mode
- AEC qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green package (RoHS pliant)
- Ultra low Rds(on)
- 100% Avalanche tested
Product Summary V DS R DS(on) ID
30 V 1.05 mΩ 180 A
PG-TO263-7-3
Type IPB180N03S4L-01
Package PG-TO263-7-3
Marking 4N03L01
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100 °C, V GS=10 V2)
Pulsed drain current2) Avalanche energy, single pulse2)
I D,pulse E AS
T C=25 °C I D=90 A
Avalanche current, single pulse I AS
- Gate source voltage
V...
