Ultra high ID
IPB180N06S4-H1
Product Summary V DS R DS(on),max ID
60 V 1.7 mΩ 180 A
PG-TO263-7-3
Type IPB180N06S4-H1
Package PG-TO263-7-3
Marking 4N06H1
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditio.
Full PDF Text Transcription for IPB180N06S4-H1 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IPB180N06S4-H1. For precise diagrams, and layout, please refer to the original PDF.
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (Ro...
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to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra low RDSon • Ultra high ID IPB180N06S4-H1 Product Summary V DS R DS(on),max ID 60 V 1.
IPB180N06S4-H1 Datasheet
