IPB180N06S4-H1 Datasheet | Infineon

OptiMOS®-T2 Power-Transistor Features - N-channel - Enhancement mode - AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (RoHS pliant) - 100% Avalanche tested - Ultra low RDSon - Ultra high ID Product Summary V DS R DS(on),max ID 60 V 1.7 mΩ 180 A PG-TO263-7-3 Type IPB180N06S4-H1 Package PG-TO263-7-3 Marking 4N06H1 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=90A Avalanche current, single pulse I AS - Gate source...