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IPB180N06S4-H1 - Power-Transistor

Datasheet Summary

Features

  • N-channel - Enhancement mode.
  • AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested.
  • Ultra low RDSon.
  • Ultra high ID IPB180N06S4-H1 Product Summary V DS R DS(on),max ID 60 V 1.7 mΩ 180 A PG-TO263-7-3 Type IPB180N06S4-H1 Package PG-TO263-7-3 Marking 4N06H1 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditio.

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Datasheet Details

Part number IPB180N06S4-H1
Manufacturer Infineon
File Size 172.42 KB
Description Power-Transistor
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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra low RDSon • Ultra high ID IPB180N06S4-H1 Product Summary V DS R DS(on),max ID 60 V 1.
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