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IPB180N10S4-02 - Power-Transistor

Datasheet Summary

Features

  • N-channel - Enhancement mode.
  • AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • RoHS compliant.
  • 100% Avalanche tested IPB180N10S4-02 Product Summary VDS RDS(on) ID 100 V 2.5 mW 180 A PG-TO263-7-3 Type IPB180N10S4-02 Package Marking PG-TO263-7-3 4N1002 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=10V1) T C=100°C, V.

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Datasheet Details

Part number IPB180N10S4-02
Manufacturer Infineon
File Size 743.83 KB
Description Power-Transistor
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OptiMOSTM-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested IPB180N10S4-02 Product Summary VDS RDS(on) ID 100 V 2.
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