100% Avalanche tested
IPB180N10S4-02
Product Summary VDS RDS(on) ID
100 V 2.5 mW 180 A
PG-TO263-7-3
Type IPB180N10S4-02
Package
Marking
PG-TO263-7-3 4N1002
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C, V GS=10V1)
T C=100°C, V.
Full PDF Text Transcription for IPB180N10S4-02 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IPB180N10S4-02. For precise diagrams, and layout, please refer to the original PDF.
OptiMOSTM-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant •...
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to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested IPB180N10S4-02 Product Summary VDS RDS(on) ID 100 V 2.
IPB180N10S4-02 Datasheet
