Datasheet4U.com

IPB180N10S4-02 - Power-Transistor

Product Overview

Infineon

📥 Download Datasheet

IPB180N10S4-02 Power-Transistor by Infineon - Datasheet Preview — Datasheet preview – IPB180N10S4-02

Datasheet Details

Part number	IPB180N10S4-02
Manufacturer	Infineon
File Size	743.83 KB
Description	Power-Transistor
Datasheet	IPB180N10S4-02 Datasheet
Additional preview pages of the IPB180N10S4-02 datasheet.

Product details

Features

N-channel - Enhancement mode.
AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
RoHS compliant.
100% Avalanche tested IPB180N10S4-02 Product Summary VDS RDS(on) ID 100 V 2.5 mW 180 A PG-TO263-7-3 Type IPB180N10S4-02 Package Marking PG-TO263-7-3 4N1002 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=10V1) T C=100°C, V.

📁 Similar Datasheet

IPB100N04S2-04 - Power-Transistor (Infineon Technologies)
IPB100N04S2L-03 - Power-Transistor (Infineon Technologies)
IPB100N04S3-03 - OptiMOS-T Power-Transistor (Infineon Technologies)
IPB100N04S4-H2 - OptiMOS-T2 Power-Transistor (Infineon Technologies)
IPB100N06S2-05 - Power-Transistor (Infineon Technologies)
IPB100N06S2L-05 - Power-Transistor (Infineon Technologies)
IPB100N06S3-03 - Power-Transistor (Infineon Technologies)
IPB100N06S3L-03 - Power-Transistor (Infineon Technologies)

Other Datasheets by Infineon

IPB180N10S4-03 - Power-Transistor
IPB180N03S4L-01 - Power-Transistor
IPB180N03S4L-H0 - Power-Transistor
IPB180N04S4-00 - Power-Transistor
IPB180N04S4-01 - Power-Transistor
IPB180N04S4-H0 - Power-Transistor

Published: May 29, 2015 |