IPB180N10S4-02
IPB180N10S4-02 is manufactured by Infineon.
OptiMOSTM-T2 Power-Transistor
Features
- N-channel
- Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- RoHS pliant
- 100% Avalanche tested
Product Summary VDS RDS(on) ID
100 V 2.5 mW 180 A
PG-TO263-7-3
Type IPB180N10S4-02
Package
Marking
PG-TO263-7-3 4N1002
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2)
E AS
I D=90A
Avalanche current, single pulse
I...
