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IPB180N10S4-03 - Power-Transistor

Datasheet Summary

Features

  • N-channel - Normal Level - Enhancement mode.
  • AEC qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green product (RoHS compliant).
  • 100% Avalanche tested IPB180N10S4-03 Product Summary VDS RDS(on) ID 100 V 3.3 mW 180 A PG-TO263-7-3 Type IPB180N10S4-03 Package PG-TO263-7-3 Marking 4N1003 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C,.

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Datasheet Details

Part number IPB180N10S4-03
Manufacturer Infineon
File Size 255.83 KB
Description Power-Transistor
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OptiMOSTM-T2 Power-Transistor Features • N-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB180N10S4-03 Product Summary VDS RDS(on) ID 100 V 3.
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