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IPB180P04P4-03 - Power-Transistor

Features

  • P-channel - Normal Level - Enhancement mode.
  • AEC qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green package (RoHS compliant).
  • 100% Avalanche tested Product Summary VDS RDS(on) ID -40 V 2.8 mW -180 A PG-TO263-7-3 Type IPB180P04P4-03 Package PG-TO263-7-3 Marking 4QP0403 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Gate Pin 1 Drain Pin 4, Tab Source Pin 2, 3, 5, 6, 7.

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Datasheet Details

Part number IPB180P04P4-03
Manufacturer Infineon
File Size 313.55 KB
Description Power-Transistor
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Final Data Sheet IPB180P04P4-03 OptiMOS®-P2 Power-Transistor Features • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on) ID -40 V 2.
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